• DocumentCode
    3499725
  • Title

    New submicron non-volatile memory modules for 16/32-bit devices

  • Author

    Kuo, Clinton ; Morton, Bruce ; Toms, Thomas ; Weidner, Mark ; Chrudimsky, Dave ; Choe, Henry ; Bowers, Mickey ; Kim, Yeon-Seuk ; Chang, Ko-Min ; Smith, Philp

  • Author_Institution
    Motorola Inc., Austin, TX, USA
  • fYear
    1993
  • fDate
    1993
  • Firstpage
    343
  • Lastpage
    347
  • Abstract
    Development of new submicron non-volatile memory modules, including an EEPROM with unique programmable redundancy and a block erasable flash EEPROM, for 16-bit and 32-bit devices is reported. Optional process modules required for the non-volatile memories are developed for integration into the baseline logic process based on 0.65 mu double metal CMOS technology.
  • Keywords
    CMOS integrated circuits; EPROM; integrated memory circuits; modules; 0.65 micron; 16 bit; 32 bit; baseline logic process; block erasable flash EEPROM; double metal CMOS technology; process modules; programmable redundancy; submicron nonvolatile memory modules; CMOS logic circuits; CMOS process; CMOS technology; EPROM; Error correction codes; Logic devices; Microcontrollers; Nonvolatile memory; Redundancy; Research and development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
  • Conference_Location
    Taipei, Taiwan
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-0978-2
  • Type

    conf

  • DOI
    10.1109/VTSA.1993.263677
  • Filename
    263677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3499725