730-nm emitting compressively strained InGaAsP quantum well cw diode lasers

Author

Al-Muhanna, A. ; Wade, J.K. ; Mawst, L.J. ; Fu, R.J.

Author_Institution

Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

13

Lastpage

14

Abstract

Summary form only given. The use of an InGaAsP quantum well (QW) active region offers the intriguing possibility of realizing reliable high-power operation at short wavelengths (730 nm). We employ high bandgap cladding layers and confining layers to suppress carrier leakage along with a 1.5% compressively strained InGaAsP QW. The structure was grown on [100] substrates misoriented 10 toward (111) A by low-pressure metal-organic chemical-vapor deposition (LPMOCVD).

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser reliability; laser transitions; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 730 nm; InGaAsP; InGaAsP quantum well active region; MOCVD; [100] substrates; carrier leakage suppression; compressively strained InGaAsP QW; compressively strained InGaAsP quantum well cw diode lasers; confining layers; high bandgap cladding layers; low-pressure metal-organic chemical-vapor deposition; reliable high-power operation; short wavelengths; Aging; Annealing; Diode lasers; Indium gallium arsenide; Ion implantation; Life estimation; Life testing; Photoluminescence; Quantum well lasers; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.675798

Filename

675798