Transport of single-walled carbon nanotube transistors after gamma radiation treatment for high-speed applications

In recent years, considerable attention has been focused on studies on the influence of gamma radiation treatments on the performance of semiconductor materials and devices, which are very important for spacecraft applications. Among the different objects studied, carbon-nanotube-based (CNT) structures are considered promising due to their unique properties. There are a number of publications concerning their microwave applications. For example, a single-electron transistor can be used as a highly sensitive electrometer based on the sequential tunneling of electrons in the Coulomb blockade regime. In this article, the authors reported on their investigation of radio-frequency single-electron transistor (rf-SET) operation of single-walled CNT quantum dots in the strong tunneling regime.