DocumentCode
3499939
Title
The model of the p-n junction depletion region v-i characteristic considering the dependence of concentration of majority carriers on voltage
Author
Baskys, A.
Author_Institution
Fac. of Electron., Vilnius Gediminas Tech. Univ.
fYear
2006
fDate
2-4 Oct. 2006
Firstpage
1
Lastpage
2
Abstract
The equation of the p-n junction depletion region v-i characteristic considering the dependence of concentration of majority carriers on voltage is proposed and examined. The analysis of equation leads to the new conclusions about the behaviour of the junction, which in the general case contradict the propositions presented in a good many of books dedicated to semiconductor devices
Keywords
p-n heterojunctions; p-n junction depletion region; semiconductor devices; Books; Charge carrier processes; Current density; Electronic mail; Equations; Lead compounds; Neodymium; P-n junctions; Semiconductor devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Baltic Electronics Conference, 2006 International
Conference_Location
Tallinn
ISSN
1736-3705
Print_ISBN
1-4244-0414-2
Electronic_ISBN
1736-3705
Type
conf
DOI
10.1109/BEC.2006.311056
Filename
4100277
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