• DocumentCode
    3500010
  • Title

    Clamp mode package diffusion welded power SiC Schottky diodes

  • Author

    Korolkov, O. ; Kuznetsova, N. ; Rang, T.

  • Author_Institution
    Dept. of Electron., Tallinn Univ. of Technol.
  • fYear
    2006
  • fDate
    2-4 Oct. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper is devoted to the results of a diffusion welding technique applied to solve the problem of packaging for large area SiC Schottky diodes. The forward current-voltage characteristics measured at 75 A measured for packaged diodes yields 250 A/cm2 (70A) at 1.9 V forward voltage. Reverse recovery time for packaged diodes was in the range of 29-36 ns
  • Keywords
    Schottky diodes; semiconductor device packaging; silicon compounds; welding; wide band gap semiconductors; 1.9 V; 29 to 36 ns; 75 A; SiC; clamp mode package; diffusion welding technique; power SiC Schottky diodes; Clamps; Current measurement; Fabrication; Metallization; Packaging; Schottky barriers; Schottky diodes; Silicon carbide; Substrates; Welding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Baltic Electronics Conference, 2006 International
  • Conference_Location
    Tallinn
  • ISSN
    1736-3705
  • Print_ISBN
    1-4244-0414-2
  • Electronic_ISBN
    1736-3705
  • Type

    conf

  • DOI
    10.1109/BEC.2006.311059
  • Filename
    4100280
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3500010