Carbon nanotubes for VLSI: Interconnect and transistor applications

Author

Awano, Y. ; Sato, S. ; Nihei, M. ; Sakai, T. ; Ohno, Y. ; Mizutani, T.

Author_Institution

Keio Univ., Yokohama, Japan

fYear

2011

fDate

25-27 April 2011

Firstpage

1

Lastpage

2

Abstract

We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 10¹³/cm²) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.

Keywords

CMOS integrated circuits; VLSI; carbon nanotubes; field effect transistors; integrated circuit interconnections; invertors; silicon; CMOS inverters; CNT-FET; Si; VLSI; carbon nanotubes; carrier polarity; current density; gate oxide; integrated circuit interconnections; shell density; CMOS integrated circuits; CNTFETs; Carbon nanotubes; Copper; Integrated circuit interconnections; Logic gates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-8493-5

Type

conf

DOI

10.1109/VTSA.2011.5872210

Filename

5872210