An atomic level study of multiple co-implantation technology for 32nm and beyond pMOSFETs ultra-shallow junction

Author

Sun, Yun-Ju ; Cheng, Ya-Yun ; Wang, Yin-Pin ; Yamamoto, Tomonari ; Cheng, Chun-Fu ; Sia, Shao-Hwang ; Chang, Yu-Chia ; Chen, Yueh-You ; Tsai, Ching-Wei ; Sheu, Yi-Ming ; Wang, Howard C -H

Author_Institution

Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan

fYear

2011

fDate

25-27 April 2011

Firstpage

1

Lastpage

2

Abstract

Carbon, Fluorine, and Nitrogen are the co-implant species known for performing PMOS ultra-shallow junction. For the first time, it is demonstrated that the combination of the above three co-implant species could be most effective in suppressing boron diffusion for the continuous device performance improvement of sub-32 nm technology. V_th roll-off characteristics were dramatically improved and a DIBL improvement of 30 mV/V was demonstrated by applying this multiple co-implantation technology. Distinctive effect of each co-implant species for PMOS ultra-shallow junction formation was found and clarified for the first time based on SIMS analysis and kinetic Monte Carlo simulation.

Keywords

MOSFET; Monte Carlo methods; boron; carbon; elemental semiconductors; fluorine; ion implantation; nitrogen; secondary ion mass spectra; semiconductor process modelling; silicon; PMOS ultra-shallow junction; SIMS analysis; Si:C,F,N,B; atomic level study; boron diffusion suppression; kinetic Monte Carlo simulation; multiple coimplantation technology; pMOSFET ultra-shallow junction; size 32 nm; voltage roll-off characteristics; Boron; Implants; Junctions; Kinetic theory; Logic gates; Nitrogen; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-8493-5

Type

conf

DOI

10.1109/VTSA.2011.5872237

Filename

5872237