Design and optimization of a TSV 3D packaged pressure sensor for high temperature and dynamic measurement

The piezoresistive pressure sensor has been used to measure the dynamic pressure as well as in high temperature environment. In this paper, a novel TSV 3D packaged pressure sensor is proposed for high temperature environment and dynamic measurement. The pressure sensors and the silicon carrier with TSV are flip chip bonded using Au/Sn eutectic for hermetic encapsulation. In order to reduce the stress generated by the package, two approaches of the bonding ring on the silicon carrier are taken into consideration. Different grooves designed in silicon carrier are simulated. The bonding ring plays a significant role while the shape of grooves in silicon carrier is not critical to the stress.