Field emitter technology for nanovision science

Author

Mimura, Hidenori ; Neo, Yoichiro ; Aoki, Toru ; Yoshida, Tomoya ; Nagao, Masayoshi

Author_Institution

Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

2

Abstract

A field emitter (FE) capable of focusing an electron beam is an attractive device for application, such as ultrafine imaging devices, a scanning electron microscope and electron beam lithography. We have developed multi-gated field emitters such as a quadruple-gated FE with a three-stacked electrode lens and a quintuple-gated FE with a four-stacked electrode lens. Both the FEs can focus the electron beam. However, the quintuple-gated FE has a stronger electron convergence than the quadruple-gated FE, and a beam crossover is clearly observed for the quintuple-gated FE.

Keywords

electron beam focusing; field emitter arrays; nanoelectronics; beam crossover; electron beam focusing; electron beam lithography; electron convergence; field emitter array; field emitter technology; multigated field emitters; nanovision science; quadruple-gated FE; three-stacked electrode lens; ultrafine imaging devices; Electric potential; Electrodes; Electron beams; Focusing; Iron; Lenses; Logic gates; beam crossover; electron beam; focusing;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2012 25th International

Conference_Location

Jeju

ISSN

pending

Print_ISBN

978-1-4673-1983-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IVNC.2012.6316867

Filename

6316867