• DocumentCode
    3503978
  • Title

    Nanodiamond vacuum field emission integrated devices

  • Author

    Kang, W.P. ; Hsu, S.H. ; Ghosh, N. ; Davidson, J.L. ; Huang, J.H. ; Kerns, D.V.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
  • fYear
    2012
  • fDate
    9-13 July 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The superb material properties of nanocrystalline diamond (nanodiamond) materials coupled with practical chemical vapor deposition (CVD) processing of deposited nitrogen-incorporated nanodiamond on variety of substrates, have promoted further interest in the use of these diamond-derived materials as electron field emitters. Experimentally, nanodiamond emitters have been observed to emit electrons at relatively low electric fields and generate useful current densities. In this work, recent development in nanodiamond vacuum field emission integrated electronic devices, viz., the nanodiamond triodes, transistors and integrated differential amplifiers are examined. The material properties, device structure and fabrication process, and the electrical performance of these devices are presented.
  • Keywords
    current density; diamond; differential amplifiers; electron field emission; nanoelectronics; transistors; triodes; vacuum microelectronics; current density; device fabrication process; device structure; diamond-derived materials; electron field emitters; integrated differential amplifiers; low electric field; nanodiamond emitters; nanodiamond triodes; nanodiamond vacuum field emission integrated electronic devices; superb material property; transistors; Cathodes; Differential amplifiers; Educational institutions; Logic gates; Materials; Nanoscale devices; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
  • Conference_Location
    Jeju
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1983-6
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IVNC.2012.6316869
  • Filename
    6316869