DocumentCode
3503978
Title
Nanodiamond vacuum field emission integrated devices
Author
Kang, W.P. ; Hsu, S.H. ; Ghosh, N. ; Davidson, J.L. ; Huang, J.H. ; Kerns, D.V.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
fYear
2012
fDate
9-13 July 2012
Firstpage
1
Lastpage
2
Abstract
The superb material properties of nanocrystalline diamond (nanodiamond) materials coupled with practical chemical vapor deposition (CVD) processing of deposited nitrogen-incorporated nanodiamond on variety of substrates, have promoted further interest in the use of these diamond-derived materials as electron field emitters. Experimentally, nanodiamond emitters have been observed to emit electrons at relatively low electric fields and generate useful current densities. In this work, recent development in nanodiamond vacuum field emission integrated electronic devices, viz., the nanodiamond triodes, transistors and integrated differential amplifiers are examined. The material properties, device structure and fabrication process, and the electrical performance of these devices are presented.
Keywords
current density; diamond; differential amplifiers; electron field emission; nanoelectronics; transistors; triodes; vacuum microelectronics; current density; device fabrication process; device structure; diamond-derived materials; electron field emitters; integrated differential amplifiers; low electric field; nanodiamond emitters; nanodiamond triodes; nanodiamond vacuum field emission integrated electronic devices; superb material property; transistors; Cathodes; Differential amplifiers; Educational institutions; Logic gates; Materials; Nanoscale devices; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
Conference_Location
Jeju
ISSN
pending
Print_ISBN
978-1-4673-1983-6
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IVNC.2012.6316869
Filename
6316869
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