Simulation and analysis on transient performance of VDMOS

Author

Meng Qing-gang ; Li Bin

Author_Institution

Coll. of Inf. & Commun. Eng., Heilongjiang Inst. of Technol., Harbin, China

Volume

02

fYear

2013

fDate

16-18 Aug. 2013

Firstpage

1307

Lastpage

1310

Abstract

VDMOS has the features of large input impedance, high switching speed and well heat stability. It has been applied widely to motor drive, switch power supply, automotive electronics and energy saving lamp and so on. Currently, the development of VDMOS in our country is still in the starting stage and the research on it is not mature. This paper aims to designing model and simulation study of VDMOS. About the design, it will be calculated from the formation and parameter. The dosage concentration of any parts of the device will be also devised on the basis of breakdown voltage that meets predicted design. Besides, the dynamic characteristics of VDMOS can be simulated through usage of MEDICI software.

Keywords

MOSFET; semiconductor device breakdown; semiconductor device models; MEDICI software; VDMOS; automotive electronics; breakdown voltage; dosage concentration; energy saving lamp; high switching speed; motor drive; switch power supply; transient performance simulation; well heat stability; Electrodes; Epitaxial growth; Insulated gate bipolar transistors; Logic gates; Substrates; TV; Transient analysis; 650V; DMOS; MEDICI; Transient performance simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Measurement, Information and Control (ICMIC), 2013 International Conference on

Conference_Location

Harbin

Print_ISBN

978-1-4799-1390-9

Type

conf

DOI

10.1109/MIC.2013.6758199

Filename

6758199