• DocumentCode
    350473
  • Title

    Environmentally harmonized plasma etching process using laser ablation of various solid materials

  • Author

    Fujita, K. ; Kobayashi, S. ; Ito, M. ; Hori, M. ; Goto, T.

  • Author_Institution
    Dept. of Quantum Eng., Nagoya Univ., Japan
  • Volume
    3
  • fYear
    1999
  • fDate
    Aug. 30 1999-Sept. 3 1999
  • Firstpage
    626
  • Abstract
    Polytetrafluoroethylene (PTFE) and polyvinylidenenefloride (PVDF) were selected as solid materials. PTFE and PVDF are fluorocarbon material ([CF/sub 2/-CF/sub 2/],) and hydrofluorocarbon materials ([CF/sub 2/-CH/sub 2/],), respectively. We have investigated the fluorocarbon species generated from the solid material using a quadrupole mass spectrometry (QMS) and the behaviors of CF/sub x/ (x=1-3) radicals in the environmentally harmonized ECR plasma system using an infrared diode laser absorption spectroscopy (IRLAS). Moreover, the radical composition in the case of PTFE ablation were compared with that in the case of PVDF ablation. On the basis of these measurement results, this process was successfully applied to the selective etching of SiO/sub 2/ over Si.
  • Keywords
    infrared spectroscopy; laser ablation; mass spectroscopy; pulsed laser deposition; sputter etching; PTFE; PTFE ablation; PVDF; PVDF ablation; Si; SiO/sub 2/; environmentally harmonized ECR plasma system; environmentally harmonized plasma etching process; fluorocarbon material; fluorocarbon species; hydrofluorocarbon materials; infrared diode laser absorption spectroscopy; laser ablation; polytetrafluoroethylene; polyvinylidenenefloride; quadrupole mass spectrometry; radical composition; selective etching; solid materials; Diode lasers; Electromagnetic wave absorption; Etching; Infrared spectra; Mass spectroscopy; Optical materials; Plasma applications; Plasma materials processing; Plasma measurements; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
  • Conference_Location
    Seoul, South Korea
  • Print_ISBN
    0-7803-5661-6
  • Type

    conf

  • DOI
    10.1109/CLEOPR.1999.817752
  • Filename
    817752