DocumentCode
3505095
Title
Novel high-power barrow-beam divergence tapered laser arrays at 980 nm
Author
Nayar, B.K. ; Lewandowski, J.J. ; Robbins, D.J. ; Vaudry, A. ; Williams, P.J.
Author_Institution
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
fYear
1998
fDate
3-8 May 1998
Firstpage
39
Lastpage
40
Abstract
Summary form only given. The authors design consists of an array of uncoupled closely spaced tapered ridge waveguides. The taper waveguide design results in low lateral beam divergence, whereas the array feature gives high output power from an aperture having dimensions comparable to broad-area devices. The array is comprised of seven elements each having a 200-/spl mu/m-long straight section of 3 /spl mu/m width, which then tapers linearly to 30 /spl mu/m over an 800 /spl mu/m length. The structures are grown by MOVPE and consist of two InGaAs quantum wells with GaAs barriers and graded-index AlGaAs cladding layers.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; waveguide lasers; 200 mum; 3 mum; 30 mum; 800 mum; 980 nm; AlGaAs; GaAs; GaAs barriers; InGaAs; InGaAs quantum well lasers; MOVPE growth; aperture; graded-index AlGaAs cladding layers; high output power; high-power barrow-beam divergence tapered laser arrays; low lateral beam divergence; taper waveguide design; uncoupled closely spaced tapered ridge waveguide arrays; uncoupled closely spaced tapered ridge waveguides; Arrayed waveguide gratings; Frequency; Optical arrays; Optical pulses; Optical waveguides; Power generation; Power lasers; Pulse measurements; Semiconductor laser arrays; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-339-0
Type
conf
DOI
10.1109/CLEO.1998.675831
Filename
675831
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