Single-crystal LaB6 tip as electron source for high-throughput electron beam lithography

Author

Rokuta, Eiji ; Murata, Hidekazu ; Shimoyama, Hiroshi ; Yasuda, Hiroshi ; Haraguchi, Takeshi

Author_Institution

Fac. of Sci. & Eng., Meijo Univ., Nagoya, Japan

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

2

Abstract

Thermal field emission (TFE) characteristics of single-crystal LaB₆ columnar tip were investigated. After adequate cleaning treatment, TFE was continuously stable at 1600 K and 1700 K in 10^-8 Pa. Emission patterns indicated that TFE could be regarded as uniform if we took it into account that the size of the emission region practically used for the e-beam lithography was about 0.5 mm on the fluorescence screen.

Keywords

cleaning; electron beam lithography; electron sources; field emission; lanthanum compounds; LaB₆; TFE characteristic; cleaning treatment; electron source; emission pattern; fluorescence screen; high-throughput electron beam lithography; single- crystal columnar tip; temperature 1600 K; temperature 1700 K; thermal field emission characteristic; Cathodes; Electron emission; Electron sources; Lithography; Logic gates; Surface morphology; Thermal stability; Electron Beam Lithography; Lanthanum hexaboraides; field-thermal emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2012 25th International

Conference_Location

Jeju

ISSN

pending

Print_ISBN

978-1-4673-1983-6

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IVNC.2012.6316925

Filename

6316925