Silicon-based waveguide materials for integrated optics

Author

Pernas, P.L. ; Piqueras, J. ; Torchia, G.A. ; Climent-Font, A. ; Jaque, F.

Author_Institution

Departamento de Fisica Aplicada CXII, Univ. Autonoma de Madrid, Spain

fYear

2005

fDate

22-24 June 2005

Firstpage

399

Lastpage

402

Abstract

In this work we present results of Si/SiO₂/SiON/SiO₂ waveguides fabricated by means of ECR-PECVD. In order to change refraction index and simultaneously to reduce losses related with hydrogen, we have used N₂ as precursor gas for controlling the nitrogen to oxygen relation. The composition of the samples were carefully controlled by RBS and ERDA analysis. In this paper we also present results of channel waveguides fabricated on silicon oxynitride material by using infrared femtosecond laser pulses. This approach is based on Si/SiO₂/SiON/SiO₂ planar waveguides previously fabricated and show low propagation losses.

Keywords

Rutherford backscattering; high-speed optical techniques; integrated optics; laser materials processing; optical fabrication; optical losses; optical materials; optical waveguides; plasma CVD; plasma radiofrequency heating; refractive index; silicon; silicon compounds; ECR-PECVD; ERDA analysis; RBS analysis; Si-SiO₂-SiON-SiO₂; Si/SiO₂/SiON/SiO₂ waveguides; channel waveguides; infrared femtosecond laser pulses; integrated optics; propagation losses; refraction index; silicon oxynitride material; silicon-based waveguide materials; Gas lasers; Hydrogen; Integrated optics; Nitrogen; Optical losses; Optical materials; Optical refraction; Optical waveguides; Silicon; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Fibres and Optical Passive Components, 2005. Proceedings of 2005 IEEE/LEOS Workshop on

Print_ISBN

0-7803-8949-2

Type

conf

DOI

10.1109/WFOPC.2005.1462162

Filename

1462162