A high-efficiency, high-power DC-DC converter using high-voltage BSITs

Author

Yamamoto, Katsuhiko ; Sugai, Tomoji ; Ohtsu, Satoshi

Author_Institution

NTT Interdisciplinary Res. Labs., Musashino, Japan

fYear

1993

fDate

19-21 April 1993

Firstpage

177

Lastpage

182

Abstract

High-voltage bipolar-mode static induction transistors (BSITs) are applied to a zero voltage switched (ZVS) pulse width modulated (PWM) power converter to increase efficiency and reduce volume and weight. The BSIT switches have significantly less power loss than conventional switches such as MOSFETs and IGBTs. Efficiency of 95% in a 40 kHz, 10 kW (53 V/200 A) converter is achieved by applying a ZVS PWM DC/DC power converter, high-voltage BSITs and a new BSIT driving method.<>

Keywords

bipolar transistors; field effect transistors; power convertors; power transistors; pulse width modulation; switching circuits; 10 kW; 200 A; 40 kHz; 53 V; 95 percent; BSITs; HV; ZVS PWM DC/DC power converter; bipolar-mode static induction transistors; efficiency; power loss; power transistors; switching circuits; DC-DC power converters; Insulated gate bipolar transistors; MOSFETs; Power generation; Power semiconductor switches; Pulse width modulation; Pulse width modulation converters; Switching converters; Switching frequency; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Conversion Conference, 1993. Yokohama 1993., Conference Record of the

Conference_Location

Yokohama, Japan

Print_ISBN

0-7803-0471-3

Type

conf

DOI

10.1109/PCCON.1993.264227

Filename

264227