Investigations on double-diffused MOS (DMOS) transistors under ESD zap conditions

Author

Boselli, Gianluca ; Meeuwsen, Stan ; Mouthaan, Ton ; Kuper, Fred

Author_Institution

Dept. of Electr. Eng., Twente Univ., Enschede, Netherlands

fYear

1999

fDate

28-30 Sept. 1999

Firstpage

11

Lastpage

18

Abstract

In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism.

Keywords

MOSFET; electrical contacts; electrostatic discharge; failure analysis; semiconductor device models; semiconductor device reliability; semiconductor device testing; 2D simulations; DMOS transistor; DMOS transistors; ESD zap conditions; double-diffused MOS transistors; drain contact; drift diffusion region; failure mechanism; p-diffusion region; parasitic bipolar structure switch-on; reverse voltage; Analytical models; Bipolar integrated circuits; Breakdown voltage; Electrostatic discharge; Failure analysis; Low voltage; MOSFETs; Power dissipation; Power integrated circuits; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1999

Conference_Location

Orlando, FL, USA

Print_ISBN

1-58637-007-X

Type

conf

DOI

10.1109/EOSESD.1999.818984

Filename

818984