Wide range control of the sustaining voltage of ESD protection elements realized in a smart power technology

Author

Gossner, Harald ; Müller-Lynch, T. ; Esmark, K. ; Stecher, M.

Author_Institution

Infineon Technol., Germany

fYear

1999

fDate

28-30 Sept. 1999

Firstpage

19

Lastpage

27

Abstract

Highly efficient ESD protection structures with a sustaining voltage >40 V are realized in a smart power technology. They guarantee excellent ESD protection at high voltage pins without the danger of transient latch-up. Compared to the vertical n-p-n transistor, a shift of the sustaining voltage of 20 V has been achieved purely by layout modification of the buried layer. The high ESD performance has been proven at product level by an ESD hardness of >8 kV (HBM).

Keywords

buried layers; electrostatic discharge; integrated circuit layout; integrated circuit reliability; integrated circuit testing; power integrated circuits; protection; voltage control; 40 V; 8 kV; ESD performance; ESD protection; ESD protection elements; ESD protection structures; HBM ESD hardness; buried layer layout modification; high voltage pins; product level ESD hardness; smart power technology; sustaining voltage; sustaining voltage range control; transient latch-up; vertical n-p-n transistor; CMOS technology; Electrostatic discharge; Infrared detectors; Laser beams; Paper technology; Protection; Tellurium; Temperature; Testing; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1999

Conference_Location

Orlando, FL, USA

Print_ISBN

1-58637-007-X

Type

conf

DOI

10.1109/EOSESD.1999.818985

Filename

818985