DocumentCode
3510363
Title
Mechanisms of anodic bonding of silicon to pyrex glass
Author
Albaugh, K.B. ; Cade, P.E. ; Rasmussen, D.H.
Author_Institution
IBM Gen. Technol. Div., Essex Junction, VT, USA
fYear
1988
fDate
6-9 June 1988
Firstpage
109
Lastpage
110
Abstract
The mechanisms of formation of anodic bonds between glasses and metals are examined. The process is found to be an electrochemical analog to thermal glass-to-metal seals, where the metal surface is oxidized into the glass due to the development of large electric fields across the anodic depletion layer. The current vs. time transient at constant voltage contains a significant amount of information regarding the process mechanisms, which are predominantly electrochemical.<>
Keywords
elemental semiconductors; glass; glass-metal seals; joining processes; semiconductor technology; semiconductor-insulator boundaries; silicon; anodic bonding; electrochemical mechanism; pyrex glass; semiconductor insulator boundaries; semiconductor technology; thermal glass-to-metal seals; transient; Area measurement; Bonding forces; Current measurement; Electrostatics; Glass; Seals; Silicon; Temperature; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
Conference_Location
Hilton Head Island, SC, USA
Type
conf
DOI
10.1109/SOLSEN.1988.26450
Filename
26450
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