Pyrometry for laser annealing

Author

Adams, Bruce ; Mayur, Abhilash ; Hunter, Aaron ; Ramanujam, Rajesh

Author_Institution

Front End Products, Appl. Mater., Sunnyvale, CA

fYear

2005

fDate

4-7 Oct. 2005

Abstract

Laser annealing is one of the process solutions to enable ultra shallow junction (USJ) formation for the 45 nm technology node. However, variations in the front-side optical properties of device wafers cause large temperature variations on the wafer surface which, in turn, cause large variations in activation of the dopants that form the junction. As a result, pyrometry and closed loop temperature control are critical to establish process uniformity and repeatability for laser annealing. Pyrometry results are presented along with the correlation between the process results (dopant activation) and the pyrometer signal. Closed loop control and future technical challenges are discussed

Keywords

integrated circuit technology; laser beam annealing; pyrometers; rapid thermal annealing; semiconductor junctions; 45 nm; 45 nm technology; closed loop temperature control; device wafers; dopant activation; front-side optical properties; laser annealing; process repeatability; process uniformity; pyrometry; rapid thermal processing; ultra shallow junction; wafer surface; Absorption; Diode lasers; Optical devices; Optical materials; Rapid thermal annealing; Rapid thermal processing; Reflectivity; Surface emitting lasers; Temperature control; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2005. RTP 2005. 13th IEEE International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9223-X

Type

conf

DOI

10.1109/RTP.2005.1613690

Filename

1613690