Properties of chemically etched porous polycrystalline silicon deposited by r.f. sputtering

Author

Huang, W.N. ; Tong, K.Y. ; Chan, P.W.

Author_Institution

Dept. of Electron. Eng., Hong Kong Polytech., Hung Hom, Hong Kong

fYear

1996

fDate

35245

Firstpage

21

Lastpage

24

Abstract

After the discovery of the luminescence phenomena in porous crystalline Si at room temperature, there has been tremendous research in the area of porous effects in Si due to its potential in optoelectronics applications. Recently, it was reported that similar photoluminescence (PL) was observed in porous CVD and cast Si formed by electrochemical anodization. Studies of porous polycrystalline Si films are attractive because it may be applied in large area devices. In this paper, we shall report the properties of porous polycrystalline silicon formed by chemically etching r.f. sputtered silicon films after furnace crystallization

Keywords

elemental semiconductors; etching; photoluminescence; porous materials; semiconductor thin films; silicon; sputtered coatings; PL spectra; RF sputtering; Si; chemically etched porous Si; optoelectronics applications; photoluminescence; polycrystalline Si; polysilicon films; Annealing; Chemical vapor deposition; Crystallization; Diffraction; Scanning electron microscopy; Semiconductor films; Silicon; Sputter etching; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996., IEEE Hong Kong

Print_ISBN

0-7803-3091-9

Type

conf

DOI

10.1109/HKEDM.1996.566297

Filename

566297