DocumentCode
3511811
Title
Advanced process control in RTP using the "relative power"
Author
Gutt, Thomas
Author_Institution
Infineon Technol. AG, Munich
fYear
2005
fDate
4-7 Oct. 2005
Abstract
Integrated circuits in safety critical applications like airbag or ABS have high quality requirements. During production of these chips the control of the quality must be applied down to each single process step. If the single wafer process is a RTP step the electrical power used to heat up the wafer can be tracked to monitor the system behaviour. In combination with other parameters like chamber temperature or temperature profile measurements misprocessed wafers can be detected and the fault mechanism can be concluded
Keywords
automotive electronics; process control; rapid thermal processing; road safety; ABS; Advanced process control; Integrated circuits; RTP; airbag; chamber temperature; electrical power; fault mechanism; monitor the system behaviour; safety critical applications; single wafer process; temperature profile measurements; Air safety; Circuit faults; Cogeneration; Computerized monitoring; Electrical fault detection; Process control; Production; Temperature measurement; Vehicle safety; Wavelength measurement; APC (advanced process control); FDC (fault detection and classification); GEMISECS interface;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2005. RTP 2005. 13th IEEE International Conference on
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-9223-X
Type
conf
DOI
10.1109/RTP.2005.1613708
Filename
1613708
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