Design and simulation of 4GHz UWB CMOS LNA for RFID systems

Author

Uddin, M. Jasim ; Sadeq, Muhammad Jafar ; Jalalifar, M.

Author_Institution

Dept. of Comput. Sci. & Eng., Asian Univ. of Bangladesh, Dhaka, Bangladesh

fYear

2012

fDate

18-19 May 2012

Firstpage

632

Lastpage

635

Abstract

Design, development and simulation results of an integrated 4 GHz ultra wide band CMOS low noise amplifier (LNA) are presented. The proposed amplifier is designed to use for RFID systems, especially in receiver applications. The amplifier employs an input band pass Chebyshev filter. It provides a forward gain (S₂₁) of 18.42 dB and reverse gain (S₁₂) of 4.01 dB with input reflection of only 9.9 dB while drawing 30 mW from a 1.5 V supply. A detailed analysis of the LNA architecture is presented, including a discussion on the effects of induced S-parameter analysis, phase shift and Smith chart analysis, and power transmission characteristics.

Keywords

CMOS integrated circuits; Chebyshev filters; MMIC amplifiers; S-parameters; field effect MMIC; low noise amplifiers; radiofrequency identification; MMIC amplifiers; RFID systems; S-parameter analysis; Smith chart analysis; UWB CMOS LNA; frequency 4 GHz; gain 18.42 dB; gain 4.01 dB; input band pass Chebyshev filter; low noise amplifiers; phase shift analysis; power 30 mW; power transmission characteristics; radiofrequency identification; voltage 1.5 V; CMOS integrated circuits; Gain; Impedance matching; Noise; Radio frequency; Radiofrequency identification;

fLanguage

English

Publisher

ieee

Conference_Titel

Informatics, Electronics & Vision (ICIEV), 2012 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4673-1153-3

Type

conf

DOI

10.1109/ICIEV.2012.6317545

Filename

6317545