Evaluation of SiC MOSFETs for a high efficiency three-phase buck rectifier

Author

Xu, Fan ; Guo, Ben ; Tolbert, Leon M. ; Wang, Fred ; Blalock, Ben J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA

fYear

2012

fDate

5-9 Feb. 2012

Firstpage

1762

Lastpage

1769

Abstract

This paper presents the characteristics of a 1200 V, 33 A SiC MOSFET and a 1200 V, 60 A SiC schottky barrier diode (SBD). The switching characteristics of the devices are tested by a double pulse test (DPT) based on a current-source structure at voltage levels up to 680 V and current up to 20 A. In addition, based on these devices, a 7.5 kW, three-phase buck rectifier for a 400 V_dc architecture data center power supply is designed. The total loss of this rectifier is calculated full load. The results show that the SiC based buck rectifier can obtain low power loss and smaller weight and volume than a Si based rectifier.

Keywords

Schottky diodes; power MOSFET; power semiconductor diodes; rectifiers; silicon compounds; wide band gap semiconductors; MOSFET; SiC; current 20 A; current 33 A; current 60 A; current-source structure; double pulse test; power 7.5 kW; schottky barrier diode; three-phase buck rectifier; voltage 1200 V; voltage 400 V; voltage 680 V; Inductors; MOSFET circuits; MOSFETs; Rectifiers; Silicon carbide; Switches; Switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE

Conference_Location

Orlando, FL

Print_ISBN

978-1-4577-1215-9

Electronic_ISBN

978-1-4577-1214-2

Type

conf

DOI

10.1109/APEC.2012.6166060

Filename

6166060