A 20 W GaN HEMT VHF/UHF Class-D power amplifier

Author

Lin, Song ; Fathy, Aly E.

Author_Institution

Miteq Inc. Hauppauge, Hauppauge, NY, USA

fYear

2011

fDate

18-19 April 2011

Firstpage

1

Lastpage

4

Abstract

A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 20 W output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier´s output power and efficiency. To assure a wideband operation, a coaxial line impedance transformer has been used as part of the input matching network; meanwhile, a wideband a 1:1 ferrite loaded balun and low pass filters are utilized on the amplifier´s output side instead of the conventional serial harmonic termination.

Keywords

UHF filters; UHF power amplifiers; VHF amplifiers; VHF filters; baluns; high electron mobility transistors; impedance convertors; low-pass filters; wideband amplifiers; GaN; HEMT; VHF-UHF class-D power amplifier; coaxial line impedance transformer; conventional serial harmonic termination; efficiency 63 percent; ferrite loaded balun; frequency 50 MHz to 550 MHz; input matching network; low pass filters; power 20 W; push-pull voltage mode Class D; wideband power amplifier; Gallium nitride; HEMTs; Harmonic analysis; Impedance matching; Power amplifiers; Power generation; Wideband; Class D Power Amplifier; GaN; UHF; VHF;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2011 IEEE 12th Annual

Conference_Location

Clearwater Beach, FL

Print_ISBN

978-1-61284-081-9

Type

conf

DOI

10.1109/WAMICON.2011.5872897

Filename

5872897