• DocumentCode
    3515277
  • Title

    Design and simulation of Multi-Quantum-Well GaAs/AlGaAs single junction p-i-n with back surface DBR reflector

  • Author

    Fardi, H. ; Jan, M. ; Van Zeghbroeck, Bart

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Colorado Denver, Denver, CO, USA
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    This paper reports on the design and simulation of a Multi Quantum Well (MQW) AlGaAs/GaAs single p-i-n junction solar cell with a Distributed Bragg Reflector (DBR) placed at back surface. The DBR structure reflects the part of the spectrum that benefits from absorption in the AlGaAs QW structure, while being transparent to the IR spectrum. The efficiencies and short-circuit currents for the AlGaAs MQW cell with and without DBR are simulated. The efficiencies and short-circuit currents of an optimized AlGaAs MQW cell with and without DBR are simulated. Results obtained show improvement in short circuit current, open circuit voltage and efficiency when both MQW and DBR were used. Simulation results predict an efficiency of about 28.4% for the MQW AlGaAs-DBR single p-i-n junction photovoltaic cell under the presence of both radiative and non-radiative recombination mechanisms.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; infrared spectra; photovoltaic cells; semiconductor quantum wells; short-circuit currents; solar cells; GaAs-AlGaAs; IR spectrum; back surface DBR reflector; distributed Bragg reflector; multiquantum-well GaAs/AlGaAs single junction p-i-n; nonradiative recombination; open circuit voltage; short-circuit currents; single p-i-n junction photovoltaic cell; single p-i-n junction solar cell; Distributed Bragg reflectors; Gallium arsenide; Photovoltaic cells; Photovoltaic systems; Quantum well devices; Reflectivity; AlGaAs/GaAs; DBR; Multi Quantum Well; modeling and Simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317721
  • Filename
    6317721