• DocumentCode
    3516737
  • Title

    20.3% efficiency rear passivated silicon solar cells with local back contact using commercial P-Cz wafers

  • Author

    Wang, Zhenjiao ; Han, Peiyu ; Meng, Oinglei ; Hongqiang Qian ; Wu, Jiaqi ; Jiang, Yongfei ; Tang, Ning ; Lu, Hongyan ; Zhu, Haidong ; Chen, Rulong ; Yang, Peter ; Ji, Jingjia ; Shi, Zhengrong ; Sugianto, Adeline ; Wenhem, Stuart

  • Author_Institution
    Suntech Power Holdings Co., Ltd., Wuxi, China
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    In this paper, progress results on the next generation Pluto technology were reported. In the next generation Pluto, we focused on the rear surface design, by improvement of the back internal reflection and passivation we got 20.3% cell efficiency with very high Jsc. Still there is further improvement of the cell design to get high FF and Eff.
  • Keywords
    Pluto; elemental semiconductors; passivation; silicon; solar cells; Si; back internal reflection; commercial P-Cz wafers; local back contact; next generation Pluto technology; passivation; solar cells; Australia; Passivation; Photovoltaic systems; Pluto; Reflectivity; Semiconductor device modeling; Surface waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317806
  • Filename
    6317806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3516737