Evaluation of stress-induced effect on electronic characteristics of nMOSFETs using mechanical stress simulation and drift-diffusion device simulation

We evaluated the stress-induced effect on electronic characteristics of nMOSFETs using mechanical stress simulation and drift-diffusion device simulation. The simulation model includes the electron mobility model that takes the stress effects into consideration. We evaluated the variation in the electronic characteristics of nMOSFET during the actual resin-molding packaging process (QFP process). The stress distribution in the nMOSFET was considered in the device simulation. As a result, the experimental results were evaluated reasonably using the proposed simulation method. It is demonstrated that the device simulation is useful and versatile for evaluating the stress-induced effect on electronic characteristics of a semiconductor device.