Epitaxial n-ZnO on p-Si with native SiOx reduced by Al overlayer

Author

Huang, Guo-Sin ; Chang, Chun-Fu ; Chen, Q.Y. ; Lin, Jin-Jie ; Wang, Jun-Hau ; Wadekar, P.V. ; Liao, Chih-Hsiung ; Liao, Hua-Hsien ; Huang, Hui-Chun ; Wijesundera, Dharshana ; Chu, W.K. ; Tu, Li Wei ; Ho, N.J.

Author_Institution

Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2012

fDate

3-8 June 2012

Abstract

RF magnetron sputtering has been employed to deposit n-type epitaxial zinc oxide thin films on p-type silicon substrates to form p-n diode structures. Native SiOx layers, Commonly found on silicon, typically of a few nanometer thick, would hinder the epitaxial growth of ZnO. In this work, a crystalline metal oxide overlayer was introduced as a buffer by imposing a reduction reaction on the SiOx layer via oxidation of the metal.

Keywords

II-VI semiconductors; aluminium; epitaxial growth; oxidation; p-i-n diodes; reduction (chemical); semiconductor thin films; silicon compounds; sputter deposition; zinc compounds; Al; RF magnetron sputtering; SiO; ZnO:Si; crystalline metal oxide overlayer; epitaxial growth; epitaxial n-ZnO on p-Si with native SiOx reduced by Al overlayer; n-type epitaxial zinc oxide thin films; oxidation; p-i-n diode structures; reduction reaction; Artificial intelligence; Epitaxial growth; Oxidation; Radio frequency; Sun; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317813

Filename

6317813