A bandgap circuit operating up to 300/spl deg/C using lateral bipolar transistors in thin-film CMOS-SOI technology

Author

Adriaensen, S. ; Dessard, V. ; Flandre, D.

Author_Institution

Microelectron. Lab., Univ. Catholique de Louvain, Belgium

fYear

1999

fDate

4-7 Oct. 1999

Firstpage

20

Lastpage

21

Abstract

A voltage reference circuit with 3 V output has been designed and implemented in an SOI FD (fully-depleted) CMOS technology for very wide temperature range applications. The design uses lateral bipolar transistors and thin-film diffusion resistors. The circuit has been fabricated and tested over the full operating temperature range (25/spl deg/C-300/spl deg/C) and provides a temperature coefficient better than 100 ppm//spl deg/C.

Keywords

CMOS integrated circuits; bipolar transistors; energy gap; integrated circuit design; integrated circuit testing; reference circuits; silicon-on-insulator; thin film resistors; 25 to 300 C; 3 V; SOI FD CMOS technology; SOI fully-depleted CMOS technology; Si-SiO/sub 2/; bandgap circuit; circuit fabrication; circuit test; design; lateral bipolar transistors; operating temperature range; temperature coefficient; thin-film CMOS-SOI technology; thin-film diffusion resistors; very wide temperature range applications; voltage reference circuit; Bipolar transistors; Circuit testing; Fabrication; Photonic band gap; SPICE; Temperature measurement; Thin film circuits; Thin film devices; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1999. Proceedings. 1999 IEEE International

Conference_Location

Rohnert Park, CA, USA

ISSN

1078-621X

Print_ISBN

0-7803-5456-7

Type

conf

DOI

10.1109/SOI.1999.819838

Filename

819838