Quantification of atomic scale defects in poly Si PV devices using atom probe tomography

Characterization of defect locations and their effects on transport in polycrystalline Si photovoltaics is readily accomplished using optical and electrical characterization. Information on the elemental nature of these defects is more difficult due to both the low concentrations and highly localized positions. This work demonstrates the ability to locate and elementally analyze electronic defects in these devices using correlative electron microscopy and spectroscopy within a focused ion beam specimen preparation tool followed by 3-D atom probe tomography.