Advanced Capacitor Dielectrics: Towards 2x nm DRAM

Author

Kim, M.-S. ; Popovici, M. ; Swerts, J. ; Pawlak, M.A. ; Tomida, K. ; Kaczer, B. ; Opsomer, K. ; Schaekers, M. ; Tielens, H. ; Vrancken, C. ; Van Elshocht, S. ; Debusschere, I. ; Altimime, L. ; Kittl, J.A.

Author_Institution

Imec, Leuven, Belgium

fYear

2011

fDate

22-25 May 2011

Firstpage

1

Lastpage

4

Abstract

Electrical data of advanced capacitor dielectrics such as Sr-rich (Sr/(Sr + Ti) ~ 62%) strontium titanate (STO), rutile TiO₂, which have dielectric constants higher than 60 even with physical thicknesses in the 7-10 nm range are presented. A practical capacitor model is proposed based on planar metal insulator-metal (MIM) system fabricated using 300 mm toolsets to access required capacitor dielectrics and to predict technical challenges of each technology node. Based on this practical model, mass production friendly path for the introduction of advanced capacitor dielectrics and its choice of electrode to extend life time of Dynamic Random Access Memory (DRAM) is proposed.

Keywords

DRAM chips; MIM devices; capacitors; high-k dielectric thin films; permittivity; DRAM; advanced capacitor dielectrics; dielectric constants; dynamic random access memory; electrode; planar metal insulator-metal system; size 300 mm; size 7 nm to 10 nm; Capacitors; Electrodes; Films; Random access memory; Strontium; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2011 3rd IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4577-0225-9

Electronic_ISBN

978-1-4577-0224-2

Type

conf

DOI

10.1109/IMW.2011.5873203

Filename

5873203