DocumentCode
3518082
Title
Characterization of reactive sputtered ITO and TiO2 /ITO thin films for applications at elevated temperatures
Author
Boyadzhiev, Stefan I. ; Rassovska, Milka M. ; Matsumura, Yoshihito ; Kotani, Yuta ; Yordanov, Rumen S. ; Yordanova, Irena R.
Author_Institution
Dept. of Microelectron., Tech. Univ. of Sofia, Sofia, Bulgaria
fYear
2010
fDate
12-16 May 2010
Firstpage
65
Lastpage
70
Abstract
In this work are discussed the technology for preparing and characterisation of indium-tin oxide (ITO) and ITO with titanium oxide underlayer thin films with properties appropriate for usage at elevated temperatures as heat reflective coatings and gas sensors. For preparing the samples the methods of radio frequency (RF) and DC-magnetron reactive sputtering were used. Sputtering of indium-tin and ITO targets with different composition in presence of oxygen as reactive gas was made. The technological parameters were studied to obtain films with optimal properties at different substrates - glass, silicon, quartz. Heating of the substrates during the preparation and their postdeposition annealing in different environments also were studied. Comparison how the different techniques and target composition affect on the films´ properties was made. The composition and microstructure of the films were studied by XPS, EPMA and XRD, the surface of the films was observed by a high-resolution SEM. Thorough profile analyses on the structure changes were performed applying XPS. Some unwished phenomena like diffusion and interactions with the substrate also were investigated. To identify the optical properties of the films the methods of visual spectrophotometry and laser ellipsometry were used. The reflectance of the films in the thermal IR range was investigated by FTIR spectrophotometer.
Keywords
Fourier transform spectra; X-ray diffraction; X-ray photoelectron spectra; annealing; crystal microstructure; electron probe analysis; ellipsometry; indium compounds; infrared spectra; reflectivity; scanning electron microscopy; semiconductor growth; semiconductor thin films; spectrophotometry; sputter deposition; surface diffusion; tin compounds; titanium compounds; wide band gap semiconductors; DC-magnetron reactive sputtering; EPMA; FTIR spectrophotometer; ITO; Si; SiO2; TiO2-ITO; XPS; XRD; diffusion; elevated temperature; gas sensors; glass; heat reflective coatings; high-resolution SEM; indium-tin oxide; laser ellipsometry; microstructure; optimal properties; postdeposition annealing; quartz; radiofrequency magnetron reactive sputtering; silicon; target composition; technological parameters; titanium oxide underlayer thin films; visual spectrophotometry; Annealing; Glass; Indium tin oxide; Optical films; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology (ISSE), 2010 33rd International Spring Seminar on
Conference_Location
Warsaw
Print_ISBN
978-1-4244-7849-1
Electronic_ISBN
978-1-4244-7850-7
Type
conf
DOI
10.1109/ISSE.2010.5547262
Filename
5547262
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