Fully depleted SOI- and sSOI-MOSFETs with GdScO3 as gate dielectric

Author

Roeckerath, M. ; Lopes, J.M.J. ; Heeg, T. ; Schubert, J. ; Lenk, St. ; Mantl, S.

Author_Institution

CNI-Center of Nanoelectronic Syst. for Inf. Technol., Inst. for Bio- & Nanosystems (IBN1 -IT), Julich

fYear

2008

fDate

12-14 March 2008

Firstpage

115

Lastpage

117

Abstract

Long channel n-MOSFETs on thin SOI and sSOI substrates have been prepared integrating gadolinium scandate as high-kappa gate dielectric in a gate last process. The GdScCh films were deposited by electron beam evaporation and subsequently annealed in oxygen atmosphere. Electrical characterization of readily processed devices reveal well behaved output and transfer characteristics with high I_on/I_off ratios of 106-108 and steep inverse subthreshold slopes of <70 mV/dec. Carrier mobilities of -155 cm/Vs for the SOI and -366 cm²/Vs for the sSOI substrates were determined.

Keywords

MOSFET; carrier mobility; electron beam annealing; gadolinium compounds; high-k dielectric thin films; silicon-on-insulator; SOI substrate; annealing; carrier mobility; channel n-MOSFETs; electron beam evaporation; gadolinium scandate; high-kappa gate dielectric; sSOI-MOSFETs; steep inverse subthreshold slopes; Annealing; CMOS technology; Dielectric materials; Dielectric substrates; Electron beams; Optical films; Resists; Semiconductor films; Silicon; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on

Conference_Location

Udine

Print_ISBN

978-1-4244-1729-2

Electronic_ISBN

978-1-4244-1730-8

Type

conf

DOI

10.1109/ULIS.2008.4527153

Filename

4527153