Simulation of transverse electron transport in resonant tunneling diode

Fast and stable stationary numerical model of electronic transport in resonant-tunneling diode (RTD) was developed. It was derived from the density functional method, applying assumption about the absence of exchange-correlation term. The model correctly describes interaction between quantum and semi-classical regions of RTD. Self-consistence between space charge and potential can be achieved for all relevant RTD structures. The results of modeling were tested for the model structures of RTDs with barrier layers formed of Al_xGa_1-xAs and Al_xGa_1-xN. There is a possibility of efficient visualization of modeling results, such as local density of states, potential and electron concentration in active region.