Real time during growth metrology and assessment of kinetics of epitaxial quantum dots by RHEED

The ability to control their shape and size and reproducibility of epitaxial quantum dots is considered as key to the performance of many advanced photovoltaic devices. We demonstrated the possibility of extracting real time using reflection high energy electron diffraction (RHEED), the average dot-size, dot-facet orientations and dot densities. Here and within the framework of the synthesis of archetype InAs/GaAs quantum dot system we have undertaken a systematic study as a function of growth parameters of the evolution of dot sizes distributions and facet orientation and show the ability of the technique to monitor facet/dot asymmetries.