DocumentCode
3519345
Title
Electromigration analysis and electro-thermo-mechanical design for semiconductor package
Author
Hsu, Hsiang-Chen ; Ju, Shen-Wen ; Lu, Jie-Rong ; Chang, Hong-Shen ; Wu, Hong-Hau
Author_Institution
Dept. of Mech. & Autom. Eng., I-Shou Univ., Dashu, Taiwan
fYear
2009
fDate
10-13 Aug. 2009
Firstpage
1113
Lastpage
1118
Abstract
In this paper, an advanced electro-thermo coupling model is developed to investigate the electromigration and electrothermo-mechanical effects on electronic packaging, especially on Package-on-Package (POP). POP packaging involves in ultra thin gold wire (phi = 1mil) on wirebonding and Sn4.0Ag0.6Cu (SAC405) solder ball on package. The current density arising in the aluminum pad (wirebonding) and in the Copper trace above SAC405 solder ball imply the hot spot where results in an electromigration along the current direction. Finite element predictions reveal the maximum electro-thermo-mechanical effective stress is located at the regions where electromigration potentially occurred. Reliability on electro-thermo-mechanical for wirebonding and SAC405 solder ball is evaluated. Current crowding, temperature distribution and electro-thermo induced effective stress distribution are predicted. A series of comprehensive parametric studies were conducted in this research.
Keywords
current density; electromigration; finite element analysis; semiconductor device packaging; tin compounds; Sn4.0Ag0.6Cu; crowding; current density; electro-thermo coupling model; electro-thermo-mechanical design; electro-thermo-mechanical effective stress; electromigration analysis; finite element method; package-on-package; semiconductor package; solder ball; temperature distribution; ultra thin gold wire; wirebonding; Aluminum; Copper; Current density; Electromigration; Electronics packaging; Electrothermal effects; Gold; Semiconductor device packaging; Stress; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-4658-2
Electronic_ISBN
978-1-4244-4659-9
Type
conf
DOI
10.1109/ICEPT.2009.5270595
Filename
5270595
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