Mo effect on one-step sputtering chalcopyrite CIGS thin films

Author

Lin, Tzu-Ying ; Chen, Chia-Hsiang ; Lai, Chih-Huang

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2012

fDate

3-8 June 2012

Abstract

In this study, we have investigated the working pressure effect on the properties of molybdenum (Mo) films and how the Mo back contact affects the chalcopyrite Cu(In,Ga)Se₂ (CIGS) films, which are prepared by one-step sputtering process. The properties of surface morphology, crystalline structure and residual stress are discussed. Mo films sputtered at low working pressure have dense structure with compressive stress, and become porous with tensile stress at high working pressure. In addition, the preferred orientation of following deposited CIGS film shows strong correlation with the residual stress of Mo back contact.

Keywords

copper compounds; gallium compounds; indium compounds; internal stresses; molybdenum; semiconductor thin films; sputter deposition; surface morphology; surface texture; ternary semiconductors; Cu(In,Ga)Se2 films; Cu(InGa)Se₂-Mo; Mo back contact affects; crystalline structure; molybdenum films; one-step sputtering chalcopyrite CIGS thin films; pressure effect; residual stress; surface morphology; tensile stress; Indexes; Magnetomechanical effects; Substrates; Mo effect; residual stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317989

Filename

6317989