Numerical modeling of InxGa1−xn silicon multi-junction tandem solar cell

This paper discusses the performance of the silicon based In_xGa_1-xN multi-junction tandem solar cells. For the double-junction tandem solar cell, the optimized condition of In composition and layer thickness of crystalline Si for the highest efficiency are studied. A In_0.40Ga_0.60N p-n junction layer with 0.5 μm layer thickness provides the highest efficiency from our simulation. For the triple-junction tandem solar cell, we find that a In₃₈Ga₆₂N/ In₅₆Ga₄₄N/ silicon with 0.75 μm, 0.75 μm, and 10.0 μm Si layer thickness could reach 39.50 % efficiency.