A senior undergraduate course on the structural design and characterization of submicron CMOS

Author

Turkman, Renan ; Fuller, Lynn

Author_Institution

Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA

fYear

1997

fDate

20-23 Jul 1997

Firstpage

33

Lastpage

35

Abstract

A required senior undergraduate course on CMOS process integration was recently added to the microelectronic engineering curriculum at RIT The objective of the course is to educate the students in the field of device/integration engineering in the semiconductor industry. The topics Include front-end of the line process integration and the physics of submicron CMOS devices. At the end of the course, the students are asked to do the structural design and the electrical evaluation of 0.25 μm, 2.5 V NMOS transistors

Keywords

CMOS integrated circuits; educational courses; electronic engineering education; integrated circuit design; integrated circuit manufacture; integrated circuit technology; 0.25 micron; 2.5 V; CMOS process integration; characterization; microelectronic engineering curriculum; senior undergraduate course; structural design; submicron CMOS; CMOS process; CMOS technology; Computer science education; Design engineering; Electrical engineering computing; Electronics industry; Isolation technology; Microelectronics; Physics education; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial

Conference_Location

Rochester, NY

ISSN

0749-6877

Print_ISBN

0-7803-3790-5

Type

conf

DOI

10.1109/UGIM.1997.616675

Filename

616675