DocumentCode
3520777
Title
Effect of shadowing ion energy flux and neutral flux and isotropic neutral flux on plasma etching profiles
Author
Wang, Chungdar Daniel ; Abraham-Shrauner, Barbara
Author_Institution
Dept. of Electr. Eng., Washington Univ., St. Louis, MO, USA
fYear
1997
fDate
20-23 Jul 1997
Firstpage
123
Abstract
Summary form only given. A model for the simulation of etch rates in ion-assisted and energetic neutral plasma etching on semiconductor wafers is developed. Explicit analytical expressions for evolving two dimensional etched surfaces are solved by the method of characteristics
Keywords
semiconductor process modelling; sputter etching; etch rate; isotropic neutral flux; method of characteristics; model; plasma etching profile; semiconductor wafer; shadowing ion energy flux; shadowing neutral flux; simulation; two dimensional surface; Acceleration; Differential equations; Etching; Plasma accelerators; Plasma applications; Plasma properties; Plasma sheaths; Plasma simulation; Semiconductor device modeling; Shadow mapping;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location
Rochester, NY
ISSN
0749-6877
Print_ISBN
0-7803-3790-5
Type
conf
DOI
10.1109/UGIM.1997.616702
Filename
616702
Link To Document