Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

Author

Tseng, H.W. ; Lu, C.T. ; Hsiao, Y.H. ; Liao, P.L. ; Chuang, Y.C. ; Liu, C.Y.

Author_Institution

Dept. of Chem. Eng. & Mater. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

401

Lastpage

405

Abstract

We observed various EM-induced failures in current-stressed Cu/Sn/Cu flip-chip solder joints. EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) on the cathode interface, and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). We believe that the above various EM-induced failure modes were the result of different current-stressing densities and Joule heating at the cathode joint interfaces.

Keywords

cathodes; copper alloys; electromigration; flip-chip devices; solders; tin alloys; CuSnCu; Joule heating; cathode interface; cathode joint interfaces; copper pad consumption; current entry point; electromigration induced failures; flip chip joint interfaces; flip chip solder joints; maximum current density; Cathodes; Current density; Current distribution; Electromigration; Electronics packaging; Electrons; Flip chip solder joints; Soldering; Testing; Tin; electromigration; packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2009. EPTC '09. 11th

Conference_Location

Singapore

Print_ISBN

978-1-4244-5099-2

Electronic_ISBN

978-1-4244-5100-5

Type

conf

DOI

10.1109/EPTC.2009.5416515

Filename

5416515