Deep ultraviolet enhanced wet chemical oxidation and etching of gallium nitride

Author

Peng, L.-H. ; Chuang, Chih-Wei ; Hsu, Y.-C. ; Ho, J.-K. ; Huang, C.-N. ; Chen, C.-Y.

Author_Institution

Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

1998

fDate

3-8 May 1998

Firstpage

153

Abstract

Summary form only given. We present a use of deep UV irradiation to enhance the oxidative-dissolution process in the photoelectrochemical etching of gallium nitride (GaN). Our study indicates that the hydration effect plays an important role in establishing a peak etch rate as high as 90 nm/min. and 120 nm/min. in aqueous potassium hydroxide (KOH) and phosphorus acid (H/sub 3/PO/sub 4/) solutions at pH=14.25 and 0.75, respectively.

Keywords

III-V semiconductors; dissolving; etching; gallium compounds; oxidation; photoelectrochemistry; solvation; wide band gap semiconductors; EDX; GaN; aqueous potassium hydroxide; deep UV enhanced wet chemical oxidation; deep UV irradiation use; hydration model; hydroxyl ions; oxidative-dissolution process; pH dependence; peak etch rate; phosphorus acid; photoelectrochemical etching; Chemicals; Dry etching; Electrodes; Gallium nitride; III-V semiconductor materials; Oxidation; Photomicrography; Plasma temperature; Wet etching; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.675987

Filename

675987