• DocumentCode
    3521285
  • Title

    Impact of quantum confinement on stress induced nMOSFET threshold voltage shift

  • Author

    Takashino, H. ; Tanizawa, M. ; Okagaki, T. ; Hayashi, T. ; Taya, M. ; Ishida, H. ; Ishikawa, K. ; Inoue, Y.

  • Author_Institution
    Renesas Electron. Corp., Itami, Japan
  • fYear
    2011
  • fDate
    8-10 Sept. 2011
  • Firstpage
    107
  • Lastpage
    110
  • Abstract
    In this paper, we propose a comprehensive model to express nMOSFET threshold voltage shift induced by the stress, ranging from high tensile one to high compressive one. Using this model, the quantum confinement effect is shown to play an important role to cause the threshold voltage shift as large as about 80mV induced by high-film-stress CESL.
  • Keywords
    MOSFET; semiconductor device models; stress analysis; high-film-stress CESL; quantum confinement effect; stress induced nMOSFET threshold voltage shift; Compressive stress; Impurities; MOSFET circuits; Silicon; Strain; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
  • Conference_Location
    Osaka
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-61284-419-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.2011.6035061
  • Filename
    6035061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3521285