Electric and optical transport of MWNT/silicon junctions

Author

Mohammed, Muatez ; Li, Zhongrui ; Cui, Jingbiao ; Chen, Tan-pin

Author_Institution

Dept. of Phys. & Astron., Univ. of Arkansas at Little RockArkansas, Little Rock, AR, USA

fYear

2012

fDate

3-8 June 2012

Abstract

The as-sonicated (So), supernatant (Su) and sediment (Se) of the MWNT product were respectively sprayed onto differently doped-silicon wafers. The current rectification properties of these formed heterojunctions between the MWNTs and silicon substrates were compared. It was found that the p-type Si forms an ohmic contact with the MWNT film but the MWNT/n-doped Si heterojunction is rectifying. We also observed photovoltaic conversions in MWNT/n-type Si junction with the illumination of a solar simulator.

Keywords

carbon nanotubes; elemental semiconductors; ohmic contacts; semiconductor doping; semiconductor heterojunctions; silicon; MWNT film; MWNT product as-sonication; MWNT product sediment; MWNT product supernatant; MWNT-n-doped silicon heterojunction; MWNT/n-type silicon junction; Si; current rectification properties; doped-silicon wafers; electric transport; multiwall carbon nanotube; ohmic contact; optical transport; p-type silicon; photovoltaic conversions; silicon substrates; solar simulator illumination; Carbon nanotubes; Electron tubes; Heterojunctions; Metals; Silicon; Substrates; Sediment; Silicon Junctions; Sonicated; Supernatant;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6318061

Filename

6318061