Analysis of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs using different transport models

Author

Schenk, Andreas ; Rhyner, Reto ; Luisier, Mathieu ; Bessire, Cedric

Author_Institution

Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland

fYear

2011

fDate

8-10 Sept. 2011

Firstpage

263

Lastpage

266

Abstract

This paper presents a TCAD study on the performance of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs. Comparative NEGF simulations of short InAs homo-diodes and experimental data on Si homo-diodes serve to calibrate the tunnel models for InAs and Si. Two workarounds for the case of Si-InAs hetero devices are found which give similar results. The crucial difference between in-junction and off-junction band-to-band tunneling is pointed out. Whereas the former cannot yield a sub-thermal slope, the latter can eventually produce a point slope of 25 mV/dec, albeit at extremely small current levels. The TCAD prediction for the maximum on-current of a Si-InAs hetero TFET is 3e-6 A/μm, about 3 orders of magnitude less than world-record CMOS.

Keywords

elemental semiconductors; field effect transistors; indium compounds; semiconductor device models; silicon; tunnel diodes; tunnel transistors; Si-InAs; TCAD prediction; homodiodes; off-junction band-to-band tunneling; transport models; tunnel FET; tunnel diodes; world-record CMOS; Doping; Logic gates; Semiconductor diodes; Semiconductor process modeling; Silicon; Tunneling; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on

Conference_Location

Osaka

ISSN

1946-1569

Print_ISBN

978-1-61284-419-0

Type

conf

DOI

10.1109/SISPAD.2011.6035075

Filename

6035075