DocumentCode
3521552
Title
VLSI process monitoring system
Author
Quick, Arthur W. ; Lucas, Joe
Author_Institution
IBM Corp., Hopewell Junction, NY, USA
fYear
1991
fDate
20-22 May 1991
Firstpage
136
Lastpage
138
Abstract
The authors describe the development and implementation of an in-situ continuous monitoring system for B/323, a VLSI manufacturing line. B/323 is a Class 10 facility with 132000 sq. ft. of VLF cleanroom surrounded by a Class 10 K controlled perimeter. The manufacturing process in B/323 consists of micron and submicron semiconductor technologies. These technologies require defect densities of less than one particle/wafer/process. These requirements can only be maintained by an in-situ continuous monitoring system at the point of distribution and the point of use. This monitoring system will give the controls needed to control and eliminate process contamination caused by room environment, process liquids, and gases
Keywords
VLSI; clean rooms; computerised monitoring; integrated circuit manufacture; B/323; Class 10 K controlled perimeter; Class 10 facility; VLF cleanroom; VLSI manufacturing line; VLSI process monitoring system; defect densities; in-situ continuous monitoring system; particle contamination; point of distribution; point of use; process gases; process liquids; room environment; Centralized control; Contamination; Control systems; Manufacturing processes; Monitoring; Process control; Semiconductor device manufacture; Sensor phenomena and characterization; Sensor systems; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Science Symposium, 1991. ISMSS 1991., IEEE/SEMI International
Conference_Location
Burlingame, CA
Print_ISBN
0-7803-0027-0
Type
conf
DOI
10.1109/ISMSS.1991.146282
Filename
146282
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