• DocumentCode
    3521552
  • Title

    VLSI process monitoring system

  • Author

    Quick, Arthur W. ; Lucas, Joe

  • Author_Institution
    IBM Corp., Hopewell Junction, NY, USA
  • fYear
    1991
  • fDate
    20-22 May 1991
  • Firstpage
    136
  • Lastpage
    138
  • Abstract
    The authors describe the development and implementation of an in-situ continuous monitoring system for B/323, a VLSI manufacturing line. B/323 is a Class 10 facility with 132000 sq. ft. of VLF cleanroom surrounded by a Class 10 K controlled perimeter. The manufacturing process in B/323 consists of micron and submicron semiconductor technologies. These technologies require defect densities of less than one particle/wafer/process. These requirements can only be maintained by an in-situ continuous monitoring system at the point of distribution and the point of use. This monitoring system will give the controls needed to control and eliminate process contamination caused by room environment, process liquids, and gases
  • Keywords
    VLSI; clean rooms; computerised monitoring; integrated circuit manufacture; B/323; Class 10 K controlled perimeter; Class 10 facility; VLF cleanroom; VLSI manufacturing line; VLSI process monitoring system; defect densities; in-situ continuous monitoring system; particle contamination; point of distribution; point of use; process gases; process liquids; room environment; Centralized control; Contamination; Control systems; Manufacturing processes; Monitoring; Process control; Semiconductor device manufacture; Sensor phenomena and characterization; Sensor systems; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Science Symposium, 1991. ISMSS 1991., IEEE/SEMI International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    0-7803-0027-0
  • Type

    conf

  • DOI
    10.1109/ISMSS.1991.146282
  • Filename
    146282