DocumentCode
3521598
Title
Physical circuit-device simulation of ESD and power devices
Author
Axelrad, V. ; Hayashi, H. ; Kurachi, I.
Author_Institution
SEQUOIA Design Syst., CA, USA
fYear
2011
fDate
8-10 Sept. 2011
Firstpage
175
Lastpage
178
Abstract
An industrial methodology for physically accurate and efficient simulation of high-field/high-voltage events such as ESD and power applications has been presented. The methodology has been applied to a number of varied industrial problems with excellent results validated by experimental data. Our approach helps make physical simulation available to designers in cases where simulation has not been widely used previously, in particular for circuit optimization of ESD protection in logic as well as power ICs.
Keywords
circuit optimisation; circuit simulation; electrostatic discharge; power integrated circuits; ESD protection; circuit optimization; high-voltage event; industrial methodology; physical circuit device simulation; physical simulation; power IC; power device; Computational modeling; Electrostatic discharge; Finite element methods; Heating; Integrated circuit modeling; Stress; Transmission line measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location
Osaka
ISSN
1946-1569
Print_ISBN
978-1-61284-419-0
Type
conf
DOI
10.1109/SISPAD.2011.6035079
Filename
6035079
Link To Document