• DocumentCode
    3521598
  • Title

    Physical circuit-device simulation of ESD and power devices

  • Author

    Axelrad, V. ; Hayashi, H. ; Kurachi, I.

  • Author_Institution
    SEQUOIA Design Syst., CA, USA
  • fYear
    2011
  • fDate
    8-10 Sept. 2011
  • Firstpage
    175
  • Lastpage
    178
  • Abstract
    An industrial methodology for physically accurate and efficient simulation of high-field/high-voltage events such as ESD and power applications has been presented. The methodology has been applied to a number of varied industrial problems with excellent results validated by experimental data. Our approach helps make physical simulation available to designers in cases where simulation has not been widely used previously, in particular for circuit optimization of ESD protection in logic as well as power ICs.
  • Keywords
    circuit optimisation; circuit simulation; electrostatic discharge; power integrated circuits; ESD protection; circuit optimization; high-voltage event; industrial methodology; physical circuit device simulation; physical simulation; power IC; power device; Computational modeling; Electrostatic discharge; Finite element methods; Heating; Integrated circuit modeling; Stress; Transmission line measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
  • Conference_Location
    Osaka
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-61284-419-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.2011.6035079
  • Filename
    6035079