DocumentCode
352195
Title
A physical approach to mismatch modelling and parameter correlations
Author
Oelun, J. ; Grünebaum, Ulrich ; Schumacher, Klaus
Author_Institution
Dortmund Univ., Germany
Volume
4
fYear
2000
fDate
2000
Firstpage
377
Abstract
The currently available first order mismatch models cannot explain many of the observed effects. The physical modelling approach described in this paper leads to a deeper understanding and gives a very precise description of actual mismatch behaviour including parameter correlations in a closed form. The model needs only few parameters which are discussed below
Keywords
integrated circuit modelling; integrated circuit; mismatch effects; parameter correlations; physical model; Convolution; Fabrication; Frequency; Geometry; MOSFETs; Predictive models; Semiconductor device modeling; Time domain analysis; Topology; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location
Geneva
Print_ISBN
0-7803-5482-6
Type
conf
DOI
10.1109/ISCAS.2000.858767
Filename
858767
Link To Document