• DocumentCode
    3522303
  • Title

    Ag-assisted electrochemical etching of silicon for antireflection in large area crystalline thin film photovoltaics

  • Author

    Li, Rui ; Chuwongin, Santhad ; Shuling Wang ; Weidong Zhou

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    We report here an electroless metal (Ag) - assisted chemical etching (MacEtch) process as light management surface-texturing technique for ultra-thin single crystalline Si thin film photovoltaics. Monolayer Ag nanostructures were formed on the top of the Si surface based on thin film evaporation and annealing process. Large area thin film black Si sample was obtained with simple wet etching process, with ~2% reflection over a wide spectra range (300 to 1050 nm). The work demonstrates the potential of MacEtch process for the fabrication of large area, flexible, high efficiency, and low cost thin film solar cells.
  • Keywords
    annealing; antireflection coatings; elemental semiconductors; etching; nanotechnology; silicon; silver; solar cells; surface texture; thin films; vacuum deposition; Ag-Si; Ag-assisted electrochemical etching; MacEtch process; annealing process; antireflection coating; electroless metal assisted chemical etching; large area crystalline thin film photovoltaics; light management surface-texturing technique; low cost thin film solar cells; monolayer Ag nanostructures; reflection; thin film evaporation; ultra-thin single crystalline Si thin film photovoltaics; wet etching process; wide spectra range; Indexes; Integrated optics; Optical device fabrication; Optical surface waves; Photovoltaic cells; Silicon; Surface treatment; anti-reflection coating; metal-assisted chemical etching; photovoltaic cells; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6318118
  • Filename
    6318118